Jihene Zribi, Bouraoui Ilahi, Bernard Paquette, Abdelatif Jaouad, Olivier Thériault, Karin Hinzer, Ross Cheriton, Gilles Patriarche, Simon Fafard, Vincent Aimez, Richard Arès, Denis Morris

2016/3

IEEE Journal of Photovoltaics

6

2

584-589

IEEE

Abstract: The effect of dot-height truncation on the device performance of multilayer
InAs/GaAs quantum dot solar cells is investigated. The different structures were grown by
chemical beam epitaxy, and an indium-flush process is used to control the dot height. A
series of ten-layer samples with dots truncated at a height of 5 and 2.5 nm, respectively, are
studied. Luminescence, atomic force microscopy, and high-resolution scanning transmission
electron microscopy results indicate that the quantum dot properties are preserved up to …