Bouraoui Ilahi, Jihene Zribi, Maxime Guillotte, Richard Arès, Vincent Aimez, Denis Morris

2016/6/24

Materials

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Multidisciplinary Digital Publishing Institute

We report on Chemical Beam Epitaxy (CBE) growth of wavelength tunable InAs/GaAs
quantum dots (QD) based superluminescent diode's active layer suitable for Optical
Coherence Tomography (OCT). The In-flush technique has been employed to fabricate QD
with controllable heights, from 5 nm down to 2 nm, allowing a tunable emission band over
160 nm. The emission wavelength blueshift has been ensured by reducing both dots' height
and composition. A structure containing four vertically stacked height-engineered QDs …