André Fekecs, Martin Chicoine, Bouraoui Ilahi, Anthony J SpringThorpe, François Schiettekatte, Denis Morris, Paul G Charette, Richard Arès

2015/9/15

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

359

99-106

North-Holland

Abstract We report on critical ion implantation and rapid thermal annealing (RTA) process
temperatures that produce resistive Fe-or Ga-implanted InGaAsP/InP heterostructures. Two
InGaAsP/InP heterostructure compositions, with band gap wavelengths of 1.3 μm and 1.57
μm, were processed by ion implantation sequences done at multiple MeV energies and high
fluence (10 15 cm− 2). The optimization of the fabrication process was closely related to the
implantation temperature which influences the type of implant-induced defect structures …