M Souaf, M Baira, H Maaref, B Ilahi

2015/10/22

arXiv preprint arXiv:1510.06539

Abstract: In this work, we have theoretically investigated the intermixing effect in highly
strained In $ _ {0.3} $ Ga $ _ {0.7} $ As/GaAs quantum well (QW) taking into consideration
the composition profile change resulting from in-situ indium surface segregation. To study
the impact of the segregation effects on the postgrowth intermixing, one dimensional steady
state Schrodinger equation and Fick's second law of diffusion have been numerically solved
by using the finite difference methods. The impact of the In/Ga interdiffusion on the QW …