Jihene Zribi, Denis Morris, Bouraoui Ilahi, Amal Aldhubaib, Vincent Aimez, Richard Ares

2016/7/1

Journal of Nanophotonics

10

3

033502-033502

International Society for Optics and Photonics

Abstract. This work reports on a chemical beam epitaxy growth study of InGaAs/GaAs
quantum dots (QDs) engineered using an in-situ indium-flush technique. The emission
energy of these structures has been selectively tuned over 225 meV by varying the dot
height from 7 to 2 nm. A blueshift of the photoluminescence (PL) emission peak and a
decrease of the intersublevel spacing energy are observed when the dot height is reduced.
Numerical investigations of the influence of dot structural parameters on their electronic …