MF Zia, M Abdel-Rahman, M Alduraibi, B Ilahi, A Alasaad

2016/4/19

Electronics Letters

52

10

827-828

IET Digital Library

A low cost, CMOS-compatible, and easily implementable method is presented for the
synthesis of a thin film thermometer material for microbolometer applications. The thin film
thermometer material was prepared by sputter depositing 11 alternative layers of vanadium
pentoxide and vanadium followed by post-deposition annealing of the deposited structure in
O2 atmosphere at 300° C. The synthesised thin film thermometers showed a maximum
temperature coefficient of resistance of− 2.92%/oC and a minimum resistivity 0.161 Ω cm.