B Ilahi, O Nasr, B Paquette, MH Hadj Alouane, N Chauvin, B Salem, L Sfaxi, C Bru-Chevalier, D Morris, R Ares, V Aimez, H Maaref

2016/1/25

Journal of Alloys and Compounds

656

132-137

Elsevier

Abstract This paper reports on experimental and theoretical investigation of atyical
temperature-dependent photoluminescence properties of InAs quantum dots in close
proximity to InGaAs strain-relief underlying quantum well. The impact of a post-growth
intermixing process on these properties has been studied. For the as-grown sample, the
maximum of the emission band follows a sigmoidal function while the photoluminescence
linewidth mimics a V-shape function as the temperature increases, from 11 to 300 K …