Bilel Azeza, Mohamed Helmi Hadj Alouane, Bouraoui Ilahi, Gilles Patriarche, Larbi Sfaxi, Afif Fouzri, Hassen Maaref, Ridha M’ghaieth

2015/7/22

Materials

8

7

4544-4552

Multidisciplinary Digital Publishing Institute

Abstract This paper reports on an initial assessment of the direct growth of In (Ga) As/GaAs
quantum dots (QDs) solar cells on nanostructured surface Si substrate by molecular beam
epitaxy (MBE). The effect of inserting 40 InAs/InGaAs/GaAs QDs layers in the intrinsic region
of the heterojunction pin-GaAs/n+-Si was evaluated using photocurrent spectroscopy in
comparison with pin-GaAs/n+-Si and pin-GaAs/GaAs without QDs. The results reveal the
clear contribution of the QDs layers to the improvement of the spectral response up to …