المؤلفون
Bouraoui Ilahi, Manel Souaf, Mourad Baira, Jawaher Alrashdi, Larbi Sfaxi, Abdulaziz Alhazaa, Hassen Maaref
الوصف
Abstract This paper investigates the impact of the deposition rate on the mean buried
InAs/GaAs quantum dots'(QDs) size by means of a coupled photoluminescence
spectroscopy and numerical approach. The proposed method consists in tuning the
theoretical transition energies by changing the QDs aspect ratio towards best fit of the
photoluminescence emission energies arising from the state filling effect. The electron-hole
confined states are obtained by solving the single particle one band effective mass …