André Fekecs, Andreas Korinek, Martin Chicoine, Bouraoui Ilahi, François Schiettekatte, Denis Morris, Richard Arès

2015/9/1

physica status solidi (a)

212

9

1888-1896

Abstract Through the recrystallization of an amorphous heterostructure, obtained by MeV Fe
ion implantation, we are able to tailor a standard epitaxial semiconductor material, a small
gap InGaAsP/InP alloy, for photoconductive terahertz optoelectronics. Here, we report on
microstructural changes occurring in the material over a broad range of rapid thermal
annealing temperatures, using X-ray diffraction line profile analysis and transmission
electron microscopy. Results show a complete amorphous transition of the …