Manel Souaf, Mourad Baira, Olfa Nasr, Mohamed Helmi Hadj Alouane, Hassen Maaref, Larbi Sfaxi, Bouraoui Ilahi

2015/7/24

Materials

8

8

4699-4709

Multidisciplinary Digital Publishing Institute

Abstract This work reports on theoretical and experimental investigation of the impact of InAs
quantum dots (QDs) position with respect to InGaAs strain reducing layer (SRL). The
investigated samples are grown by molecular beam epitaxy and characterized by
photoluminescence spectroscopy (PL). The QDs optical transition energies have been
calculated by solving the three dimensional Schrödinger equation using the finite element
methods and taking into account the strain induced by the lattice mismatch. We have …