MH Hadj Alouane, B Ilahi, H Maaref, B Salem, V Aimez, D Morris, A Turala, P Regreny, M Gendry

2010/7/15

Journal of Applied Physics

108

2

024317

AIP

We report on the effects of the As/P intermixing induced by phosphorus ion implantation in
InAs/InP quantum dashes (QDas) on their photoluminescence (PL) properties. For
nonintermixed QDas, usual temperature-dependent PL properties characterized by a
monotonic redshift in the emission band and a continual broadening of the PL linewidth as
the temperature increases, are observed. For intermediate ion implantation doses, the
inhomogeneous intermixing enhances the QDas size dispersion and the enlarged …