MH Hadj Alouane, A Helali, D Morris, H Maaref, V Aimez, B Salem, M Gendry, B Ilahi

2014/1/31

Journal of Luminescence

145

595-599

North-Holland

Abstract This paper treats the impact of post growth tuned InAs/InP quantum dashes'(QDas)
size/composition distribution on carriers' localization and thermal redistribution. The spread
of this distribution depends on the experimental conditions used for the phosphorus ion
implantation enhanced intermixing process. Atypical temperature-dependent luminescence
properties have been observed and found to be strongly dependent on the amount of QDas
size/composition dispersion. The experimental results have been reproduced by a model …