المؤلفون
M Hjiri, L Sfaxi, F Hassen, B Ilahi, H Maaref, M Senes, X Marie, T Amand
الوصف
We report on the electronic coupling effect on carrier dynamics in InAs/GaAs vertically
stacked quantum dot (QD) layers. For this purpose, both pico-second and continuous-wave
excitation techniques have been used. We show that for large numbers of QD deposition
cycles (≥ 10 planes), lateral coupling effects between the neighbouring QDs of the same
InAs layer influence remarkably the electronic structure. Lateral coupling of vertically-aligned
QDs results in the appearance of a new photoluminescence (PL) band. This new PL line …