H Khmissi, K Naji, MH Hadj Alouane, N Chauvin, C Bru-Chevallier, B Ilahi, G Patriarche, M Gendry

2012/4/1

Journal of Crystal Growth

344

1

45-50

North-Holland

InP nanowires (NWs) with an InAs insertion were grown on (001)-and (111)-oriented silicon
substrates by catalyst assisted molecular beam epitaxy. To prevent the crystallization of the
catalyst droplet we propose a procedure based on the realization of the switching of the
elements V flux during a growth interruption. With this procedure and with the growth
conditions we have used, the crystal structure of the NWs is purely wurtzite without any
stacking faults. With these growth conditions, both radial and axial growths occur …