Bernard Paquette, Bouraoui Ilahi, Vincent Aimez, Richard Arès

2013/11/15

Journal of Crystal Growth

383

30-35

North-Holland

Abstract The surface morphology and incorporation behavior of heavily Te-doped GaAs
were studied for various growth parameters by chemical beam epitaxy (CBE). The Te
precursor, DIPTe (diisopropyl telluride), acts as a volatile dopant in the growth temperature
range of 475–595 C. Electrical activation of Te is increased for lower growth temperatures.
The Te surfactant effect was shown to lead to three-dimensional growth, which greatly
affected the resulting surface morphology. We have shown that growth parameters can be …