B Ilahi, B Salem, V Aimez, L Sfaxi, H Maaref, D Morris

2006/6/27

Nanotechnology

17

15

3707

IOP Publishing

Abstract Proton implantation followed by rapid thermal annealing (RTA) has been employed
for the post-growth tuning of the band gap of molecular beam epitaxy grown InAs/GaAs
quantum dots (QDs). To enhance QD intermixing, point defects are created by proton
implantation at different doses (5× 10 10–10 14 cm− 2) followed by rapid thermal annealing
at 675 C for 30 s. Low-temperature photoluminescence (PL) measurements have shown that
the proton-implantation-induced intermixing alters both the optical transition energies and …