F Saidi, R Hamila, B Ilahi, A Fouzri, M Khalfioui, H Maaref

2011/12/1

Sensor Letters

9

6

2316-2319

American Scientific Publishers

We have investigated by photoreflectance spectroscopy (PR) the optical properties of
GaAs1− x N x/GaAs heterostructures (thin films) grown by Molecular beam epitaxy (MBE) on
(001) oriented GaAs substrates. High resolution X ray Diffraction (HRXRD) has been
achieved to determine the nitrogen fraction (of about 0.45–2.4%) incorporated into GaAs.
We have studied the effect of the nitrogen incorporation on the conduction band of GaAs by
PR measurements which is confirmed by using the band anticrossing model. The …