B Ilahi, L Sfaxi, G Bremond, H Maaref

2006/7/31

Materials Science and Engineering: C

26

5

971-974

Elsevier

The effect of rapid thermal annealing on InAs quantum dots (QDs) capped with In0. 4Ga0.
6As/GaAs layer has been investigated by photoluminescence (PL). An unusual red shift of
the PL emission peak has been observed for an annealing temperature (Ta) of 650° C
together with a pronounced improvement of the PL from the quantum well like
heterocapping layer (QW). This behavior is attributed to the strain induced phase separation
of the hetero-capping alloy. However, for Ta= 750° C, a blue shift of the QDs PL peak has …