B Ilahi, L Sfaxi, L Bouzaı̈, F Hassen, H Maaref

2003/4/30

Physica E: Low-dimensional Systems and Nanostructures

17

232-234

North-Holland

Temperature dependence of the effective band gap (BG) energy of strained InxGa1−
xAs/GaAs single-quantum well and multi-quantum well structures grown by solid source
MBE at varied substrate temperature is investigated by photoluminescence spectroscopy
between 10 K and room temperature. For low-temperature-grown heterostructure, the
temperature-induced BG shrinkage exhibits a good correlation with that of unstrained
material. However, no consensus is shown to occur for a relatively high-temperature …