B Ilahi, L Sfaxi, G Bremond, M Senes, X Marie, H Maaref

2005/5

The European Physical Journal-Applied Physics

30

2

101-105

EDP Sciences

Abstract 1.3$\mu $ m room temperature emitting multiple-stacked InAs/GaAs (001) quantum
dots (QDs) are grown by molecular beam epitaxy (MBE) and investigated by
photoluminescence (PL), polarized photoluminescence (PPL), photoluminescence
excitation (PLE), time resolved photoluminescence (TRPL) and atomic force microscopy
AFM. The PL measurement shows that two distinct sets of QDs coexist in the sample. The
AFM image of the tenth QDs layer not only confirms the bimodal size distribution of the …