MH Hadj Alouane, B Ilahi, H Maaref, B Salem, V Aimez, D Morris, M Gendry

2011/10/1

Journal of nanoscience and nanotechnology

11

10

9251-9255

American Scientific Publishers

We report on the impact of phosphorous ion-implantation-induced band gap tuning on the
temperature dependent photoluminescence (PL) properties of InAs/InP quantum dashes
(QDas). The high temperature range carriers' activation energy, extracted from Arrhenius
plots, is found to decrease from 238 to 42 meV when the ion implantation dose increases
from 1011 cm− 2 to 5× 1014 cm− 2, which is consistent with the observed emission energy
blueshift increase with increasing the ion implantation doses. This effect is attributed to …