Z Zaâboub, B Ilahi, B Salem, V Aimez, D Morris, L Sfaxi, H Maaref

2010/6/15

Journal of Applied Physics

107

12

124306

AIP

Low temperature photoluminescence (PL) measurements are carried out to investigate the
influence of the high extent of intermixing induced by proton implantation and subsequent
annealing on the optical and electronic properties of the InAs/GaAs quantum dots (QDs).
Several QDs structures were proton implanted at various doses (5× 10 11–1× 10 15 ions
cm− 2) with an acceleration energy of 18 keV and then annealed at 700° C for 30 s. A
saturation of the emission energy blueshift is found to occur for implantation doses higher …