المؤلفون
MH Hadj Alouane, B Ilahi, L Sfaxi, H Maaref
الوصف
Abstract In this article, comprehensive combination of photomodulated optical spectroscopy
(PR) and temperature-dependent photoluminescence (PL) is carried out to investigate the
electronic energy levels and carrier dynamics in nanometers' size InAs quantum dots (QDs)
in different surrounding material. Depending on the temperature range, the integrated PL
intensity as a function of temperature, correlated to a rate equation model reveals two
thermal escape channels for the InAs QDs in a pure GaAs matrix and three thermal …