Z Zaâboub, B Ilahi, L Sfaxi, H Maaref, B Salem, V Aimez, D Morris

2008/6/23

Physics Letters A

372

26

4714-4717

North-Holland

This work reports on InAs/GaAs quantum dots (QDs) intermixing, induced by phosphorous
ion implantation and subsequent rapid thermal annealing. The implantation process was
carried out at room temperature at various doses (5× 1010–1014 ions/cm2), where the ions
were accelerated at 50 keV. To promote the atomic intermixing, implanted samples are
subjected to rapid thermal annealing at 675° C for 30 s. Low temperature
photoluminescence (PL) measurements are carried out to investigate the influence of the …