H Khmissi, MH Hadj Alouane, N Chauvin, K Naji, G Patriarche, B Ilahi, H Maaref, C Bru-Chevallie, M Gendry

2011/5/22

Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials

1-4

IEEE

Abstract: InAs/InP core-shell nanowires (NWs) are grown on Si (001) and Si (111) substrates
by catalyst assisted molecular beam epitaxy (MBE). Structural characterization of the core-
shell NWs shows that the crystallographic structure is pure wurtzite without any stacking
faults and that both axial and radial growth occur simultaneously. The investigation of the
optical properties reveals that the core-shell NWs are emitting in the telecommunication
bands with a radiative lifetime of 5 ns range at 14K. The room temperature …