Z Zaâboub, B Ilahi, L Sfaxi, H Maaref

2008/7/1

Materials Science and Engineering: C

28

5

1002-1005

Elsevier

The effect of post-growth rapid thermal annealing on the photoluminescence properties of
long wavelength low density InAs/GaAs (001) quantum dots (QDs) with well defined
electronic shells has been investigated. For an annealing temperature of 650° C for 30 s, the
emission wavelength and the intersublevel spacing energies remain unchanged while the
integrated PL intensity increases. For higher annealing temperature, blue shift of the
emission energy together with a decrease in the intersublevel spacing energies are …