B Ilahi, L Sfaxi, F Hassen, L Bouzaiene, H Maaref, B Salem, G Bremond, O Marty

2003/10/1

physica status solidi (a)

199

3

457-463

WILEY‐VCH Verlag

Abstract InAs/GaAs vertically stacked self-assembled quantum dot (QD) structures with
different GaAs spacer layer thicknesses are grown by solid source molecular beam epitaxy
(SSMBE) and investigated by transmission electron microscopy (TEM) and
photoluminescence (PL) spectroscopy. An increase in the polarization anisotropy is
observed when the spacer layer thickness decreases. For a 10 monolayer (ML) thick inter-
dots GaAs spacer, the TEM image shows an increase in the QD size when moving to the …