O Nasr, MH Hadj Alouane, B Ilahi, B Salem, L Sfaxi, H Maaref

2014/12/5

Journal of Alloys and Compounds

615

683-686

Elsevier

Abstract This paper reports on the evolution of InAs/GaAs quantum dots'(QDs) intermixing
process depending on the QD position with respect to the InGaAs strain reducing layer. The
postgrowth intermixing has been ensured by rapid thermal annealing (RTA) at different
temperatures and the processed samples were investigated by photoluminescence (PL)
spectroscopy. The reference sample, containing InAs QDs in pure GaAs matrix,
demonstrates the highest intermixing degree with an emission energy blueshift up to 300 …