MH Hadj Alouane, N Chauvin, H Khmissi, K Naji, B Ilahi, H Maaref, G Patriarche, M Gendry, C Bru-Chevallier

2012/12/21

Nanotechnology

24

3

035704

IOP Publishing

Abstract In order to investigate the optical properties of wurtzite (Wz) InP nanowires grown
on Si (001) by solid source molecular beam epitaxy with the vapour–liquid–solid method,
the growth temperature and V/III pressure ratio have been optimized to remove any zinc-
blende insertion. These pure Wz InP nanowires have been investigated by
photoluminescence (PL), time-resolved PL and PL excitation. Direct observation of the
second and third valence band in Wz InP nanowires using PL spectroscopy at high …