الوصف
Strain-driven phase separation of InAs self-assembled quantum dot's InGaAs heterocapping
alloy is investigated by temperature-dependent photoluminescence (PL) spectroscopy and
tuned by rapid thermal annealing (RTA) as a means to control the optical properties of such
a structure. The integrated PL intensity is found to exhibit an anomalous increase with
increasing temperature up to 100K. This behavior is attributed to the strain-driven phase
separation-induced formation of small potential barriers surrounding the quantum dots …