O Nasr, MH Hadj Alouane, H Maaref, F Hassen, L Sfaxi, B Ilahi

2014/4/30

Journal of Luminescence

148

243-248

North-Holland

Abstract In this paper, we report on the impact of InAs quantum dots'(QDs) position within
InGaAs strain reducing layer on their structural and optical properties. Morphological
investigation revealed that the QD'size and density are strongly dependent on the InGaAs
underlying layer's thickness. Additionally, comprehensive spectroscopic study by room
temperature photoreflectance spectroscopy (PR) and temperature dependent
photoluminescence (PL) showed that indium segregation and strain driven alloy phase …