L Bouzaiene, B Ilahi, L Sfaxi, F Hassen, H Maaref, O Marty, J Dazord

2004/8/1

Applied Physics A: Materials Science & Processing

79

3

587-591

Springer Berlin/Heidelberg

Coherent InAs islands separated by GaAs spacer (d) layers are shown to exhibit self-
organized growth along the vertical direction. A vertically stacked layer structure is useful for
controlling the size distribution of quantum dots. The thickness of the GaAs spacer has been
varied to study its influence on the structural and optical properties. The structural and
optical properties of multilayer InAs/GaAs quantum dots (QDs) have been investigated by
atomic force microscopy (AFM), transmission electron microscopy (TEM), and …