B Ilahi, L Sfaxi, F Hassen, H Maaref, B Salem, G Guillot, A Jbeli, X Marie

2005/9/1

Applied Physics A: Materials Science & Processing

81

4

813-816

Springer Berlin/Heidelberg

Room temperature 1.3 µm emitting InAs quantum dots (QDs) covered by an In 0.4 Ga 0.6
As/GaAs strain reducing layer (SRL) have been fabricated by solid source molecular beam
epitaxy (SSMBE) using the Stranski–Krastanov growth mode. The sample used has been
investigated by temperature and excitation power dependent photoluminescence (PL),
photoluminescence excitation (PLE), and time resolved photoluminescence (TRPL)
experiments. Three emission peaks are apparent in the low temperature PL spectrum. We …