الوصف
Abstract This paper reports on an in-situ growth process used to optimize InAs/GaAs
quantum dot (QD) multilayer structures grown on (001) GaAs substrate by chemical beam
epitaxy (CBE). Defects related to the incoherently relaxed InAs clusters are found to alter the
QD nucleation mechanism on the subsequent layers, leading to reduced QD density and
photoluminescence intensity. The formation of poor crystalline quality clusters is avoided by
growing the GaAs spacer layers in a two-step process. The technique consists in covering …