المؤلفون
B Ilahi, Z Zaâboub, B Salem, D Morris, V Aimez, L Sfaxi, H Maaref
تاريخ النشر
2009/4/30
مجلة
Materials Science in Semiconductor Processing
المجلد
12
الإصدار
1
الصفحات
71-74
الناشر
Pergamon
الوصف
Low-temperature photoluminescence (PL) experiments have been carried out to investigate
In/Ga intermixing in InAs/GaAs self-assembled quantum dots (QDs) by studying the changes
in the optical properties of the system by rapid thermal annealing (RTA) and by room
temperature proton implantation at various doses followed by RTA. The study of the RTA
effect on the investigated structure shows that thermal stability can be ensured for an
annealing temperature below 675° C. For higher annealing temperatures, the thermal …
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