MH Hadj Alouane, R Anufriev, N Chauvin, H Khmissi, K Naji, B Ilahi, H Maaref, G Patriarche, M Gendry, C Bru-Chevallier

2011/9/12

Nanotechnology

22

40

405702

IOP Publishing

Abstract Optical properties of wurtzite InP/InAs/InP core–shell nanowires grown on silicon
substrates by solid source molecular beam epitaxy are studied by means of
photoluminescence and microphotoluminescence. The growth conditions were optimized to
obtain purely wurtzite radial quantum wells emitting in the telecom bands with a radiative
lifetime in the 5–7 ns range at 14 K. Optical studies on single nanowires reveal that the
polarization is mainly parallel to the growth direction. A 20-fold reduction of the …