B Ilahi, L Sfaxi, F Hassen, B Salem, G Bremond, O Marty, L Bouzaiene, H Maaref

2006/3/31

Materials Science and Engineering: C

26

2

374-377

Elsevier

Vertically stacked multilayers of self-organized InAs/GaAs quantum dots (QDs) structures
with different GaAs intermediate layer thicknesses varying between 2.8 and 17 nm are
grown by solid source molecular beam epitaxy (SSMBE) and investigated by
photoluminescence spectroscopy (PL). For 17 nm thick GaAs spacer, the PL spectra show
two well separated features attributed to the formation of two QDs family with a bimodal size
distribution indicating no correlation between the dots in different layers. In the meanwhile …