André Fekecs, Martin Chicoine, Bouraoui Ilahi, François Schiettekatte, Paul G Charette, Richard Ares

2013/4/3

Journal of Physics D: Applied Physics

46

16

165106

IOP Publishing

Abstract In this paper, we report on an effective post-growth processing technique for
developing semi-insulating (SI) photonic thin films absorbing in 1.3 µm. For that purpose, we
examined a 1 µm thick unintentionally n-doped In 0.72 Ga 0.28 As 0.61 P 0.39 epilayer (0.95
eV bandgap) modified by multiple-energy MeV Fe ion implantation. Fe was chosen as a
deep-level impurity. The ion beam processing was performed at room temperature, followed
by rapid thermal annealing (RTA) at 800 C for 15 s. We investigated the impact of ion …