Z Zaâboub, B Ilahi, L Sfaxi, H Maaref, B Salem, V Aimez, D Morris

2008/6/3

Nanotechnology

19

28

285715

IOP Publishing

Abstract In this work, low-temperature photoluminescence (PL) and photoluminescence
excitation (PLE) experiments have been carried out to investigate the optical and electronic
properties of InAs/GaAs quantum dots (QDs) subjected to room-temperature proton
implantation at various doses (5× 10 10–10 14 ions cm− 2) and subsequent thermal
annealing. The energy shift of the main QD emission band is found to increase with
increasing implantation dose. Our measurements show clear evidence of an …