B Ilahi, L Sfaxi, G Bremond, M Hjiri, H Maaref

2005/3/1

physica status solidi (c)

2

4

1325-1330

WILEY‐VCH Verlag

Abstract Vertically stacked self-assembled InAs/GaAs quantum dots (QDs) structures with
different GaAs spacer layer thicknesses are investigated by photoluminescence
spectroscopy (PL). For correlated structures, the PL full widths at half maximum (FWHM) is
found to go throw a minimum and the PL intensity throw a maximum for a spacer layer
thickness around 8.5 nm. The effect of post growth rapid thermal annealing (RTA) on the PL
properties of the optimized structure is discussed.(© 2005 WILEY-VCH Verlag GmbH & …