B Ilahi, L Sfaxi, E Tranvouez, G Brémond, M Baïra, C Bru-Chevalier, H Maaref

2006/9/18

Physics Letters A

357

4

360-363

North-Holland

Optical and morphological properties of solid source molecular beam epitaxy (MBE) grown
InAs/GaAs quantum dots are investigated by photoluminescence spectroscopy (PL) and
atomic force microscopy (AFM) as a function of the growth rate. The 10 K relatively high
excitation density PL spectra of the investigated samples reveal the existence of multipeaks
characterizing fundamental states and corresponding excited states. The emission energies
are red-shifted by approximately 70 meV, when the InAs deposition rate is reduced from …