Flexible electronics: materials and applications WS Wong, A Salleo
Springer Science & Business Media, 2009
839 2009 Separation of thin films from transparent substrates by selective optical processing NW Cheung, TD Sands, WS Wong
US Patent 6,071,795, 2000
768 2000 Damage-free separation of GaN thin films from sapphire substrates WS Wong, T Sands, NW Cheung
Applied Physics Letters 72 (5), 599-601, 1998
518 1998 Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off WS Wong, T Sands, NW Cheung, M Kneissl, DP Bour, P Mei, LT Romano, ...
Applied physics letters 75 (10), 1360-1362, 1999
458 1999 All jet-printed polymer thin-film transistor active-matrix backplanes AC Arias, SE Ready, R Lujan, WS Wong, KE Paul, A Salleo, ML Chabinyc, ...
Applied Physics Letters 85 (15), 3304-3306, 2004
352 2004 Flexible image sensor array with bulk heterojunction organic photodiode TN Ng, WS Wong, ML Chabinyc, S Sambandan, RA Street
Applied Physics Letters 92 (21), 191, 2008
317 2008 Separation of thin films from transparent substrates by selective optical processing NW Cheung, TD Sands, WS Wong
US Patent 6,420,242, 2002
317 2002 Jet printing flexible displays RA Street, WS Wong, SE Ready, ML Chabinyc, AC Arias, S Limb, ...
Materials Today 9 (4), 32-37, 2006
290 2006 3D printing: an emerging tool for novel microfluidics and lab-on-a-chip applications AA Yazdi, A Popma, W Wong, T Nguyen, Y Pan, J Xu
Microfluidics and Nanofluidics 20, 1-18, 2016
278 2016 light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-offWS Wong, T Sands, NW Cheung, M Kneissl, DP Bour, P Mei, LT Romano, ...
Applied Physics Letters 77 (18), 2822-2824, 2000
248 2000 Additive jet printing of polymer thin-film transistors KE Paul, WS Wong, SE Ready, RA Street
Applied Physics Letters 83 (10), 2070-2072, 2003
245 2003 Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials NW Cheung, TD Sands, WS Wong
US Patent 6,335,263, 2002
222 2002 Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials NW Cheung, TD Sands, WS Wong
US Patent 6,335,263, 2002
222 2002 Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials NW Cheung, TD Sands, WS Wong
US Patent 6,335,263, 2002
222 2002 Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials WS Wong, MA Kneissl
US Patent 6,562,648, 2003
195 2003 Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials WS Wong, MA Kneissl
US Patent 6,562,648, 2003
195 2003 Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials WS Wong, MA Kneissl
US Patent 6,562,648, 2003
195 2003 Reduction of the energy gap pressure coefficient of GaN due to the constraining presence of the sapphire substrate P Perlin, L Mattos, NA Shapiro, J Kruger, WS Wong, T Sands, NW Cheung, ...
Journal of Applied Physics 85 (4), 2385-2389, 1999
130 1999 Superlattice strain relief layer for semiconductor devices WS Wong, MA Kneissl, Z Yang, M Teepe, C Knollenberg
US Patent 7,547,925, 2009
128 2009 The de novo cytosine methyltransferase DRM2 requires intact UBA domains and a catalytically mutated paralog DRM3 during RNA–directed DNA methylation in Arabidopsis thaliana IR Henderson, A Deleris, W Wong, X Zhong, HG Chin, GA Horwitz, ...
PLoS genetics 6 (10), e1001182, 2010
125 2010