| Fabrication of AlGaN/GaN Ω-shaped nanowire fin-shaped FETs by a top-down approach KS Im, V Sindhuri, YW Jo, DH Son, JH Lee, S Cristoloveanu, JH Lee Applied Physics Express 8 (6), 066501, 2015 | 51 | 2015 |
| 3D GaN nanoarchitecture for field-effect transistors MF Fatahilah, K Strempel, F Yu, S Vodapally, A Waag, HS Wasisto Micro and Nano Engineering 3, 59-81, 2019 | 47 | 2019 |
| Comparison for 1/f Noise Characteristics of AlGaN/GaN FinFET and Planar MISHFET S Vodapally, CG Theodorou, Y Bae, G Ghibaudo, S Cristoloveanu, KS Im, ... IEEE Transactions on Electron Devices, 2017 | 37 | 2017 |
| Fabrication of normally-off GaN nanowire gate-all-around FET with top-down approach KS Im, CH Won, S Vodapally, R Caulmilone, S Cristoloveanu, YT Kim, ... Applied Physics Letters 109 (14), 143106, 2016 | 35 | 2016 |
| 1/f-Noise in AlGaN/GaN Nanowire Omega-FinFETs S Vodapally, YI Jang, IM Kang, IT Cho, JH Lee, Y Bae, G Ghibaudo, ... IEEE Electron Device Letters 38 (2), 252-254, 2017 | 29 | 2017 |
| Lateral GaN nanowire prepared by using two-step TMAH wet etching and HfO2 sidewall spacer KS Im, CH Won, S Vodapally, DH Son, YW Jo, YH Park, JH Lee, JH Lee Journal of Crystal Growth 441, 41-45, 2016 | 26 | 2016 |
| Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET DH Son, YW Jo, V Sindhuri, KS Im, JH Seo, YT Kim, IM Kang, ... Microelectronic Engineering 147, 155-158, 2015 | 26 | 2015 |
| Temperature-dependent characteristics of AlGaN/GaN FinFETs with sidewall MOS channel KS Im, HS Kang, DK Kim, S Vodapally, YH Park, JH Lee, YT Kim, ... Solid-State Electronics 120, 47-51, 2016 | 18 | 2016 |
| 1/f Noise Characteristics of AlGaN/GaN FinFETs with and without TMAH surface treatment V Sindhuri, DH Son, DG Lee, SH Sakong, YH Jeong, IT Cho, JH Lee, ... Microelectronic Engineering 147, 134-136, 2015 | 14 | 2015 |
| Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator DK Kim, V Sindhuri, YW Jo, DS Kim, HS Kang, JH Lee, YS Lee, Y Bae, ... Solid-State Electronics 100, 11-14, 2014 | 12 | 2014 |
| Performance of AlGaN/GaN Nanowire Omega-Shaped-Gate Fin-Shaped Field-Effect Transistor DG Lee, V Sindhuri, YW Jo, DH Son, HS Kang, JH Lee, JH Lee, ... Journal of Nanoscience and Nanotechnology 16 (5), 5049-5052, 2016 | 9 | 2016 |
| 1/f-noise characteristics of AlGaN/GaN omega shaped nanowire FETs S Vodapally, CH Won, IT Cho, JH Lee, Y Bae, S Cristoloveanu, KS Im, ... Ultimate Integration on Silicon (EUROSOI-ULIS), 2016 Joint International …, 2016 | 7 | 2016 |
| Control of transconductance in high performance AlGaN/GaN FinFETs YW Jo, DH Son, CH Won, V Sindhuri, JH Kim, JH Seo, IM Kang, JH Lee Power Electronics and Drive Systems (PEDS), 2015 IEEE 11th International …, 2015 | 7 | 2015 |
| Performance enhancement of AlGaN/GaN nanochannel omega-FinFET KS Im, JH Seo, S Vodapally, IM Kang, JH Lee, S Cristoloveanu, JH Lee Solid-State Electronics 129, 196-199, 2017 | 6 | 2017 |
| Device Performances Related to Gate Leakage Current in Al₂O₃/AlGaN/GaN MISHFETs DK Kim, V Sindhuri, DS Kim, YW Jo, HS Kang, YI Jang, IM Kang, Y Bae, ... JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 14 (5), 601-608, 2014 | 5* | 2014 |
| Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment KS Im, JG Kim, S Vodapally, R Caulmilone, S Cristoloveanu, JH Lee Microelectronic Engineering 178, 217-220, 2017 | 4 | 2017 |
| Micro and Nano Engineering MF Fatahilah, K Strempel, F Yu, S Vodapally, A Waag, HS Wasisto | 2* | |
| Novel AlGaN/GaN omega-FinFETs with excellent device performances KS Im, CH Won, JH Seo, IM Kang, S Vodapally, YS Lee, JH Lee, YT Kim, ... Solid-State Device Research Conference (ESSDERC), 2016 46th European, 323-326, 2016 | 1 | 2016 |
| Effect of multiple carbon-doped/undoped GaN buffer layer on current collapse in AlGaN/GaN HEMTs HS Kang, CH Won, DS Kim, SM Jeon, YJ Kim, YM Kwon, V Sindhuri, ... | 1* | |
| 2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON, EUROSOI-ULIS 2016 H Wong, J Zhang, X Feng, D Yu, H Iwai, K Kakushima, S Vodapally, ... Simulation 44, 47, 2016 | | 2016 |
Jae-Hoon LeeSamsung ElectronicsAdresse e-mail validée de samsung.com
