| SiC nanowires: material and devices K Zekentes, K Rogdakis Journal of Physics D: Applied Physics 44 (13), 133001, 2011 | 224 | 2011 |
| Integration of two-dimensional materials-based perovskite solar panels into a stand-alone solar farm S Pescetelli, A Agresti, G Viskadouros, S Razza, K Rogdakis, ... Nature Energy 7 (7), 597-607, 2022 | 113 | 2022 |
| Indoor perovskite photovoltaics for the internet of things—challenges and opportunities toward market uptake C Polyzoidis, K Rogdakis, E Kymakis Advanced Energy Materials 11 (38), 2101854, 2021 | 78 | 2021 |
| Phonon-and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs K Rogdakis, S Poli, E Bano, K Zekentes, MG Pala Nanotechnology 20 (29), 295202, 2009 | 63 | 2009 |
| Tunable ferroelectricity in artificial tri-layer superlattices comprised of non-ferroic components K Rogdakis, JW Seo, Z Viskadourakis, Y Wang, LFN Ah Qune, E Choi, ... Nature Communications 3, Article number: 1064, 2012., 2012 | 59 | 2012 |
| 3C-silicon carbide nanowire FET: an experimental and theoretical approach K Rogdakis, SY Lee, M Bescond, SK Lee, E Bano, K Zekentes IEEE Transactions on Electron Devices 55 (8), 1970-1976, 2008 | 58 | 2008 |
| Spin transport parameters of NbN thin films characterized by spin pumping experiments K Rogdakis, A Sud, M Amado, CM Lee, L McKenzie-Sell, KR Jeon, ... Physical Review Materials 3 (1), 014406, 2019 | 39 | 2019 |
| Up-scalable emerging energy conversion technologies enabled by 2D materials: from miniature power harvesters towards grid-connected energy systems K Rogdakis, N Karakostas, E Kymakis Energy & Environmental Science 14 (6), 3352-3392, 2021 | 38 | 2021 |
| Theoretical comparison of 3C-SiC and Si nanowire FETs in ballistic and diffusive regimes K Rogdakis, M Bescond, E Bano, K Zekentes Nanotechnology 18 (47), 475715, 2007 | 34 | 2007 |
| A two-fold engineering approach based on Bi 2 Te 3 flakes towards efficient and stable inverted perovskite solar cells D Tsikritzis, K Rogdakis, K Chatzimanolis, M Petrović, N Tzoganakis, ... Materials Advances 1 (3), 450-462, 2020 | 27 | 2020 |
| Inverted perovskite solar cells with enhanced lifetime and thermal stability enabled by a metallic tantalum disulfide buffer layer K Chatzimanolis, K Rogdakis, D Tsikritzis, N Tzoganakis, M Tountas, ... Nanoscale Advances 3 (11), 3124-3135, 2021 | 26 | 2021 |
| Progress in SiC nanowire field-effect-transistors for integrated circuits and sensing applications K Zekentes, J Choi, V Stambouli, E Bano, O Karker, K Rogdakis Microelectronic Engineering 255, 111704, 2022 | 22 | 2022 |
| Rectifying source and drain contacts for effective carrier transport modulation of extremely doped SiC nanowire FETs K Rogdakis, E Bano, L Montes, M Bechelany, D Cornu, K Zekentes IEEE transactions on nanotechnology 10 (5), 980-984, 2010 | 21 | 2010 |
| Memristive perovskite solar cells towards parallel solar energy harvesting and processing-in-memory computing K Rogdakis, M Loizos, G Viskadouros, E Kymakis Materials Advances 3 (18), 7002-7014, 2022 | 16 | 2022 |
| An electronic synaptic memory device based on four-cation mixed halide perovskite M Loizos, K Rogdakis, E Kymakis Discover Materials 2 (1), 11, 2022 | 13 | 2022 |
| Si nanowire p-FET with asymmetric source–drain I–V characteristics SK Lee, SY Lee, K Rogdakis, CO Jang, DJ Kim, E Bano, K Zekentes Solid State Communications 149 (11-12), 461-463, 2009 | 13 | 2009 |
| Fabrication of ion-implanted Si nanowire p-FETs SY Lee, CO Jang, DJ Kim, JH Hyung, K Rogdakis, E Bano, K Zekentes, ... The Journal of Physical Chemistry C 112 (34), 13287-13291, 2008 | 12 | 2008 |
| Mixed‐Halide Perovskite Memristors with Gate‐Tunable Functions Operating at Low‐Switching Electric Fields K Rogdakis, K Chatzimanolis, G Psaltakis, N Tzoganakis, D Tsikritzis, ... Advanced Electronic Materials 9 (12), 2300424, 2023 | 10 | 2023 |
| Hybrid chips to enable a sustainable internet of things technology: opportunities and challenges K Rogdakis, G Psaltakis, G Fagas, A Quinn, R Martins, E Kymakis Discover Materials 4 (1), 4, 2024 | 9 | 2024 |
| Field effect transistors based on catalyst-free grown 3C-SiC nanowires K Rogdakis, E Bano, L Montes, M Bechelany, D Cornu, K Zekentes Materials Science Forum 645, 1235-1238, 2010 | 9 | 2010 |
Marc BescondIM2NP - CNRS - Aix-Marseille UniversityVerified email at im2np.fr
