| HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks D Garbin, E Vianello, O Bichler, Q Rafhay, C Gamrat, G Ghibaudo, ... IEEE Transactions on Electron Devices 62 (8), 2494-2501, 2015 | 227 | 2015 |
| Semi-analytical modeling of short-channel effects in Si and Ge symmetrical double-gate MOSFETs A Tsormpatzoglou, CA Dimitriadis, R Clerc, Q Rafhay, G Pananakakis, ... IEEE Transactions on Electron devices 54 (8), 1943-1952, 2007 | 117 | 2007 |
| Variability-tolerant convolutional neural network for pattern recognition applications based on OxRAM synapses D Garbin, O Bichler, E Vianello, Q Rafhay, C Gamrat, L Perniola, ... 2014 IEEE international electron devices meeting, 28.4. 1-28.4. 4, 2014 | 89 | 2014 |
| Impact of source-to-drain tunnelling on the scalability of arbitrary oriented alternative channel material nMOSFETs Q Rafhay, R Clerc, G Ghibaudo, G Pananakakis Solid-State Electronics 52 (10), 1474-1481, 2008 | 44 | 2008 |
| Effects of the pH on the formation and doping mechanisms of ZnO nanowires using aluminum nitrate and ammonia C Verrier, E Appert, O Chaix-Pluchery, L Rapenne, Q Rafhay, ... Inorganic Chemistry 56 (21), 13111-13122, 2017 | 39 | 2017 |
| New Y-function based MOSFET parameter extraction method from weak to strong inversion range JB Henry, Q Rafhay, A Cros, G Ghibaudo Solid-State Electronics 123, 84-88, 2016 | 38 | 2016 |
| Resistive memory variability: A simplified trap-assisted tunneling model D Garbin, E Vianello, Q Rafhay, M Azzaz, P Candelier, B DeSalvo, ... Solid-State Electronics 115, 126-132, 2016 | 34 | 2016 |
| Tunable morphology and doping of ZnO nanowires by chemical bath deposition using aluminum nitrate C Verrier, E Appert, O Chaix-Pluchery, L Rapenne, Q Rafhay, ... The Journal of Physical Chemistry C 121 (6), 3573-3583, 2017 | 33 | 2017 |
| New parameter extraction method based on split C–V measurements in FDSOI MOSFETs IB Akkez, A Cros, C Fenouillet-Beranger, F Boeuf, Q Rafhay, F Balestra, ... Solid-state electronics 84, 142-146, 2013 | 28 | 2013 |
| Conventional technological boosters for injection velocity in ultrathin-body MOSFETs M Ferrier, R Clerc, L Lucci, Q Rafhay, G Pananakakis, G Ghibaudo, ... IEEE transactions on Nanotechnology 6 (6), 613-621, 2007 | 26 | 2007 |
| Refined conformal mapping model for MOSFET parasitic capacitances based on elliptic integrals G Hiblot, Q Rafhay, F Boeuf, G Ghibaudo IEEE Transactions on Electron Devices 62 (3), 972-979, 2015 | 24 | 2015 |
| On the accuracy of current TCAD hot carrier injection models in nanoscale devices A Zaka, Q Rafhay, M Iellina, P Palestri, R Clerc, D Rideau, D Garetto, ... Solid-state electronics 54 (12), 1669-1674, 2010 | 24 | 2010 |
| Endurance statistical behavior of resistive memories based on experimental and theoretical investigation DA Robayo, G Sassine, Q Rafhay, G Ghibaudo, G Molas, E Nowak IEEE Transactions on Electron Devices 66 (8), 3318-3325, 2019 | 22 | 2019 |
| Integration of LaMnO3+ δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD R Rodriguez-Lamas, D Pla, O Chaix-Pluchery, B Meunier, F Wilhelm, ... Beilstein Journal of Nanotechnology 10 (1), 389-398, 2019 | 22 | 2019 |
| Technological guidelines for the design of tandem III-V nanowire on Si solar cells from opto-electrical simulations V Maryasin, D Bucci, Q Rafhay, F Panicco, J Michallon, ... Solar Energy Materials and Solar Cells 172, 314-323, 2017 | 22 | 2017 |
| On the impact of OxRAM-based synapses variability on convolutional neural networks performance D Garbin, E Vianello, O Bichler, M Azzaz, Q Rafhay, P Candelier, ... Proceedings of the 2015 IEEE/ACM International Symposium on Nanoscale …, 2015 | 22 | 2015 |
| Impact of channel orientation on ballistic current of nDGFETs with alternative channel materials Q Rafhay, R Clerc, M Ferrier, G Pananakakis, G Ghibaudo Solid-State Electronics 52 (4), 540-547, 2008 | 22 | 2008 |
| Using a mixed ionic electronic conductor to build an analog memristive device with neuromorphic programming capabilities K Maas, E Villepreux, D Cooper, C Jiménez, H Roussel, L Rapenne, ... Journal of Materials Chemistry C 8 (2), 464-472, 2020 | 20 | 2020 |
| High performance CMOS FDSOI devices activated at low temperature L Pasini, P Batude, J Lacord, M Casse, B Mathieu, B Sklenard, FP Luce, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 20 | 2016 |
| Modeling of the impact of source/drain regions on short channel effects in MOSFETs T Dutta, Q Rafhay, G Pananakakis, G Ghibaudo 2013 14th International Conference on Ultimate Integration on Silicon (ULIS …, 2013 | 19 | 2013 |
Gerard GhibaudoIMEP-LAHC, Minatec-INP GrenobleAdresse e-mail validée de minatec.inpg.fr
