Fabrication and characterization of a thin-body poly-Si 1T DRAM with charge-trap effect JH Seo, YJ Yoon, E Yu, W Sun, H Shin, IM Kang, JH Lee, S Cho
IEEE Electron Device Letters 40 (4), 566-569, 2019
34 2019 Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced – Characteristic for Switching Applications JH Seo, YW Jo, YJ Yoon, DH Son, CH Won, HS Jang, IM Kang, JH Lee
IEEE Electron Device Letters 37 (7), 855-858, 2016
32 2016 Suppression of current collapse in AlGaN/GaN MISHFET with carbon‐doped GaN/undoped GaN multi‐layered buffer structure HS Kang, CH Won, YJ Kim, DS Kim, YJ Yoon, IM Kang, YS Lee, JH Lee
physica status solidi (a) 212 (5), 1116-1121, 2015
31 2015 Design and analysis of Si-based arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET) JH Seo, YJ Yoon, S Lee, JH Lee, S Cho, IM Kang
Current Applied Physics 15 (3), 208-212, 2015
31 2015 Capacitorless one-transistor dynamic random access memory based on double-gate GaAs junctionless transistor YJ Yoon, JH Seo, MS Cho, BG Kim, SH Lee, IM Kang
Japanese Journal of Applied Physics 56 (6S1), 06GF01, 2017
30 2017 Fabrication of high-density out-of-plane microneedle arrays with various heights and diverse cross-sectional shapes H Roh, YJ Yoon, JS Park, DH Kang, SM Kwak, BC Lee, M Im
Nano-Micro Letters 14, 1-19, 2022
29 2022 TMAH-based wet surface pre-treatment for reduction of leakage current in AlGaN/GaN MIS-HEMTs YJ Yoon, JH Seo, MS Cho, HS Kang, CH Won, IM Kang, JH Lee
Solid-State Electronics 124, 54-57, 2016
29 2016 Retinal degeneration reduces consistency of network-mediated responses arising in ganglion cells to electric stimulation YJ Yoon, JI Lee, YJ Jang, S An, JH Kim, SI Fried, M Im
IEEE Transactions on Neural Systems and Rehabilitation Engineering 28 (9 …, 2020
26 2020 A polycrystalline-silicon dual-gate MOSFET-based 1T-DRAM using grain boundary-induced variable resistance YJ Yoon, JH Seo, S Cho, JH Lee, IM Kang
Applied Physics Letters 114 (18), 2019
26 2019 Design and analysis of sub-10 nm junctionless fin-shaped field-effect transistors SY Kim, JH Seo, YJ Yoon, GM Yoo, YJ Kim, HR Eun, HS Kang, J Kim, ...
JSTS: Journal of Semiconductor Technology and Science 14 (5), 508-517, 2014
23 2014 Capacitorless one-transistor dynamic random-access memory based on asymmetric double-gate Ge/GaAs-heterojunction tunneling field-effect transistor with n-doped boosting layer … YJ Yoon, JH Seo, IM Kang
Japanese Journal of Applied Physics 57 (4S), 04FG03, 2018
18 2018 Design and analysis of AlGaN/GaN MIS HEMTs with a dual-metal-gate structure YI Jang, SH Lee, JH Seo, YJ Yoon, RH Kwon, MS Cho, BG Kim, GM Yoo, ...
JSTS: Journal of Semiconductor Technology and Science 17 (2), 223-229, 2017
16 2017 GaN junctionless trigate field-effect transistor with deep-submicron gate length: Characterization and modeling in RF regime KS Im, JH Seo, YJ Yoon, YI Jang, JS Kim, S Cho, JH Lee, S Cristoloveanu, ...
Japanese Journal of Applied Physics 53 (11), 118001, 2014
15 2014 Deep sub-60 mV/decade subthreshold swing in AlGaN/GaN FinMISHFETs with M-plane sidewall channel Q Dai, DH Son, YJ Yoon, JG Kim, X Jin, IM Kang, DH Kim, Y Xu, ...
IEEE Transactions on Electron Devices 66 (4), 1699-1703, 2019
14 2019 One-transistor dynamic random-access memory based on gate-all-around junction-less field-effect transistor with a Si/SiGe heterostructure YJ Yoon, JS Lee, DS Kim, SH Lee, IM Kang
Electronics 9 (12), 2134, 2020
11 2020 Anomalous DC characteristics of AlGaN/GaN HEMTs depending on proton irradiation energies DS Kim, JH Lee, JG Kim, YJ Yoon, JS Lee, JH Lee
ECS Journal of Solid State Science and Technology 9 (6), 065005, 2020
11 2020 Fabrication of AlGaN/GaN MISHEMT with dual-metal gate electrode and its performances JH Jung, MS Cho, WD Jang, SH Lee, J Jang, JH Bae, YJ Yoon, IM Kang
Applied Physics A 126, 1-7, 2020
11 2020 Polycrystalline-silicon-MOSFET-based capacitorless DRAM with grain boundaries and its performances SH Lee, WD Jang, YJ Yoon, JH Seo, HJ Mun, MS Cho, J Jang, JH Bae, ...
IEEE Access 9, 50281-50290, 2021
10 2021 Sub-10 nm Ge/GaAs heterojunction-based tunneling field-effect transistor with vertical tunneling operation for ultra-low-power applications YJ Yoon, JH Seo, S Cho, HI Kwon, JH Lee, IM Kang
JSTS: Journal of Semiconductor Technology and Science 16 (2), 172-178, 2016
10 2016 Universal dry synthesis and patterning of high-quality and-purity graphene quantum dots by ion-beam assisted chemical vapor deposition JM Ha, NE Lee, YJ Yoon, SH Lee, YS Hwang, JK Suk, CY Lee, CR Kim, ...
Carbon 186, 28-35, 2022
9 2022