Abdelatif Jaouad
Abdelatif Jaouad
Adresse e-mail validée de usherbrooke.ca
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Année
Fabrication of silicon nitride waveguides for visible-light using PECVD: a study of the effect of plasma frequency on optical properties
A Gorin, A Jaouad, E Grondin, V Aimez, P Charette
Optics Express 16 (18), 13509-13516, 2008
1722008
Performance comparison of AlGaAs, GaAs and InGaP tunnel junctions for concentrated multijunction solar cells
JF Wheeldon, CE Valdivia, AW Walker, G Kolhatkar, A Jaouad, A Turala, ...
Progress in Photovoltaics: Research and Applications 19 (4), 442-452, 2011
882011
Antireflection coating design for triple-junction III–V/Ge high-efficiency solar cells using low absorption PECVD silicon nitride
R Homier, A Jaouad, A Turala, CE Valdivia, D Masson, SG Wallace, ...
IEEE Journal of Photovoltaics 2 (3), 393-397, 2012
472012
Five-volt vertically-stacked, single-cell GaAs photonic power converter
CE Valdivia, MM Wilkins, B Bouzazi, A Jaouad, V Aimez, R Arès, ...
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV …, 2015
352015
Optimized pre-treatment process for MOS-GaN devices passivation
A Chakroun, H Maher, E Al Alam, A Souifi, V Aimez, R Arès, A Jaouad
IEEE Electron Device Letters 35 (3), 318-320, 2014
322014
SiO2 shallow nanostructures ICP etching using ZEP electroresist
M Guilmain, A Jaouad, S Ecoffey, D Drouin
Microelectronic Engineering 88 (8), 2505-2508, 2011
292011
AlGaAs tunnel junction for high efficiency multi-junction solar cells: Simulation and measurement of temperature-dependent operation
JF Wheeldon, CE Valdivia, A Walker, G Kolhatkar, TJ Hall, K Hinzer, ...
2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 000106-000111, 2009
232009
Electrothermal mapping of AlGaN/GaN HEMTs using microresistance thermometer detectors
O Arenas, É Al Alam, V Aimez, A Jaouad, H Maher, R Ares, F Boone
IEEE Electron Device Letters 36 (2), 111-113, 2014
212014
GaAs passivation by low-frequency plasma-enhanced chemical vapour deposition of silicon nitride
A Jaouad, V Aimez, C Aktik
Electronics Letters 40 (16), 1024-1026, 2004
212004
Passivation of air-exposed AlGaAs using low frequency plasma-enhanced chemical vapor deposition of silicon nitride
A Jaouad, V Aimez
Applied physics letters 89 (9), 092125, 2006
202006
Normally‐off AlGaN/GaN MOS‐HEMT using ultra‐thin Al0.45Ga0.55N barrier layer
A Chakroun, A Jaouad, M Bouchilaoun, O Arenas, A Soltani, H Maher
physica status solidi (a) 214 (8), 1600836, 2017
192017
Simulation of a through cell via contacts architecture for HCPV multi-junction solar cells
O Richard, A Jaouad, B Bouzazi, R Arès, S Fafard, V Aimez
Solar Energy Materials and Solar Cells 144, 173-180, 2016
192016
AlGaN/GaN MOS-HEMT device fabricated using a high quality PECVD passivation process
A Chakroun, A Jaouad, A Soltani, O Arenas, V Aimez, R Ares, H Maher
IEEE Electron Device Letters 38 (6), 779-782, 2017
162017
Integration of micro resistance thermometer detectors in AlGaN/GaN devices
O Arenas, É Al Alam, A Thevenot, Y Cordier, A Jaouad, V Aimez, H Maher, ...
IEEE Journal of the Electron Devices Society 2 (6), 145-148, 2014
152014
Inductively coupled plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry
P Harvey-Collard, A Jaouad, D Drouin, M Pioro-Ladrière
Microelectronic engineering 110, 408-413, 2013
152013
Influence of oxygen monolayer at Fe/MgO interface on transport properties in Fe/MgO/Fe (001) magnetic tunnel junctions
PJ Zermatten, F Bonell, S Andrieu, M Chshiev, C Tiusan, A Schuhl, ...
Applied Physics Express 5 (2), 023001, 2012
152012
Characterization of dynamic self-heating in GaN HEMTs using gate resistance measurement
A Cutivet, F Cozette, M Bouchilaoun, A Chakroun, O Arenas, M Lesecq, ...
IEEE Electron Device Letters 38 (2), 240-243, 2016
142016
Advances with vertical epitaxial heterostructure architecture (VEHSA) phototransducers for optical to electrical power conversion efficiencies exceeding 50 percent
S Fafard, F Proulx, MCA York, M Wilkins, CE Valdivia, M Bajcsy, D Ban, ...
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V 9743 …, 2016
132016
Black germanium produced by inductively coupled plasma etching
S Schicho, A Jaouad, C Sellmer, D Morris, V Aimez, R Arès
Materials Letters 94, 86-88, 2013
132013
Silicon nitride nanotemplate fabrication using inductively coupled plasma etching process
A Ayari-Kanoun, A Jaouad, A Souifi, D Drouin, J Beauvais
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2011
132011
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