Suivre
Christophe Pavageau
Christophe Pavageau
MEMS Design Group Manager, DelfMEMS
Adresse e-mail validée de delfmems.com - Page d'accueil
Titre
Citée par
Citée par
Année
Is SOI CMOS a promising technology for SOCs in high frequency range?
C Raynaud, F Gianesello, C Tinella, P Flatresse, R Gwoziecki, P Touret, ...
ECS Meeting Abstracts, 571, 2006
332006
A 7-dB 43-GHz CMOS distributed amplifier on high-resistivity SOI substrates
C Pavageau, MS Moussa, JP Raskin, D Vanhoenaker-Janvier, N Fel, ...
IEEE transactions on microwave theory and techniques 56 (3), 587-598, 2008
242008
Utilisation des technologies CMOS SOI 130 nm pour des applications en gamme de fréquences millimétriques
C Pavageau
Université des Sciences et Technologie de Lille-Lille I, 2005
162005
Behaviour of TFMS and CPW line on SOI substrate versus high temperature for RF applications
MS Moussa, C Pavageau, D Lederer, L Picheta, F Danneville, N Fel, ...
Solid-state electronics 50 (11-12), 1822-1827, 2006
112006
Low power 23-Ghz and 27-Ghz distributed cascode amplifiers in a standard 130nm SOI CMOS process
C Pavageau, A Siligaris, L Picheta, F Danneville, MS Moussa, JP Raskin, ...
IEEE MTT-S International Microwave Symposium Digest, 2005., 2243-2246, 2005
92005
A 60-GHz LNA and a 92-GHz low-power distributed amplifier in CMOS with above-IC
C Pavageau, O Dupuis, M Dehan, B Parvais, G Carchon, W De Raedt
2008 European Microwave Integrated Circuit Conference, 250-253, 2008
62008
Temperature effect on the performance of a traveling wave amplifier in 130 nm SOI technology
MS Moussa, C Pavageau, F Danneville, J Russat, N Fel, JP Raskin, ...
2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium-Digest of …, 2005
52005
Low-cost CMOS-based receive modules for 60 GHz wireless communication
P Wambacq, K Raczkowski, V Ramon, A Vasylchenko, A Enayati, ...
2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium, 1-4, 2009
42009
Center balanced distributed ESD protection for 1–110 GHz distributed amplifier in 45 nm CMOS technology
S Thijs, D Linten, C Pavageau, M Scholz, G Groeseneken
2009 31st EOS/ESD Symposium, 1-6, 2009
42009
Design of a distributed oscillator in 130 nm SOI MOS technology
MS Moussa, C Pavageau, L Picheta, F Danneville, J Russat, N Fel, ...
2006 European Microwave Conference, 1526-1529, 2006
42006
An investigation of temperature effects on CPW and MSL on SOI substrate for RF applications
MS Moussa, C Pavageau, D Lederer, L Picheta, F Danneville, J Russat, ...
2005 IEEE International SOI Conference Proceedings, 70-71, 2005
42005
Mems fixed capacitor comprising a gas-containing gap and process for manufacturing said capacitor
C Pavageau
US Patent App. 14/436,274, 2015
22015
RF mems crosspoint switch and crosspoint switch matrix comprising RF mems crosspoint switches
C Pavageau
US Patent 9,048,523, 2015
22015
Behavior of a traveling-wave amplifier versus temperature in SOI technology
MS Moussa, C Pavageau, P Simon, F Danneville, J Russat, N Fel, ...
IEEE transactions on microwave theory and techniques 54 (6), 2675-2683, 2006
22006
Utilization of tunable components for 4G frequency reconfigurable mobile terminal antenna
A Cihangir, F Ferrero, C Luxey, G Jacquemod, A Reinhardt, L Dussopt, ...
2014 International Workshop on Antenna Technology: Small Antennas, Novel EM …, 2014
12014
An approach of rf-mems technology platform for multi-band multi-mode handsets
C Pavageau, O Millet, A Cao
DelfMEMS, Villeneuve-d'Ascq, France, 2011
12011
Forced OFF-state for switching reliability of low actuation voltage RF MEMS electrostatic switch
N Lorphelin, AS Rollier, S Touati, C Pavageau, R Robin, A Kanciurzewski, ...
MEMSWave conference, 2010
12010
Design of distributed amplifiers and oscillators in 130 nm SOI MOS technology
MS Moussa, C Pavageau, L Picheta, F Danneville, J Russat, N Fel, ...
Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated …, 2006
12006
An investigation of high temperature effects on CPW and MSL on SOI substrate for RF applications
M Si Moussa, C Pavageau, D Lederer, L Picheta, F Danneville, JP Raskin, ...
Solid-State Electronics 50, 1822, 2006
12006
Behavior of a common source traveling wave amplifier versus temperature in SOI technology
MS Moussa, C Pavageau, P Simon, F Danneville, J Russat, N Fel, ...
2005 European Microwave Conference 2, 4 pp.-1078, 2005
12005
Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.
Articles 1–20