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Hamzeh Alaibakhsh
Hamzeh Alaibakhsh
School of Electrical Engineering, Iran University of Science and Technology
Adresse e-mail validée de elec.iust.ac.ir
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Practical optimization of highly sensitive azo photoconductor with circular electrode scheme
SS Mousavi, B Sajad, B Efafi, H Alaibakhsh, KE Jahromi, MH Majlesara, ...
Journal of Lightwave Technology 36 (24), 5800-5806, 2018
132018
Analytical modeling of pinning process in pinned photodiodes
H Alaibakhsh, MA Karami
IEEE transactions on electron devices 65 (10), 4362-4368, 2018
112018
A new analytical pinned photodiode capacitance model
H Alaibakhsh, MA Karami
IEEE Electron Device Letters 39 (3), 379-382, 2018
92018
Electrical Crosstalk Analysis in a Pinned Photodiode CMOS Image Sensor
M Khabir, H Alaibakhsh, MA Karami
Applied Optics 60 (30), 2021
52021
A general compact pinned photodiode model capable of miniature PPD modeling
H Alaibakhsh, MA Karami
IEEE transactions on electron devices 68 (6), 2785-2790, 2021
42021
A 3-D device-level investigation of a lag-free PPD pixel with a capacitive deep trench isolation as shared vertical transfer gate
H Alaibakhsh, MA Karami
IEEE Transactions on Electron Devices 65 (10), 4381-4386, 2018
42018
A simulation study of electric field engineering with multi-level pinned photodiodes for fast and complete charge transfer
H Alaibakhsh, M Khabir, MA Karami
Optik 260, 169054, 2022
32022
Optical modeling of sunlight by using partially coherent sources in organic solar cells
H Alaibakhsh, G Darvish
Applied Optics 55 (7), 1808-1813, 2016
32016
A shared transfer gate 2T pixel
H Alaibakhsh, MA Karami
2017 IEEE 4th International Conference on Knowledge-Based Engineering and …, 2017
22017
Numerical study of a Fresnel zone plate based lens for a 2μm×2μm CMOS image sensor pixel
H Alaibakhsh, MA Karami
Optik - International Journal for Light and Electron Optics 127 (17), 6867-6873, 2016
22016
3D device‐level simulation of charge separation from sidewall in vertical transfer gate pinned photodiode pixels for noise mitigation
S Heidari, H Alaibakhsh, M Azim Karami
IET Circuits, Devices & Systems 14 (5), 619-622, 2020
12020
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